Jean-Luc Autran: search on Z-Library

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1

[IEEE 2015 IEEE International Reliability Physics Symposium (IRPS) - Monterey, CA, USA (2015.4.19-2015.4.23)] 2015 IEEE International Reliability Physics Symposium - Alpha soft error rate of FDSOI 28 nm SRAMs: Experimental testing and simulation analysis

Malherbe, Victor, Gasiot, Gilles, Soussan, Dimitri, Patris, Aurelien, Autran, Jean-Luc, Roche, Philippe

Year:

2015

Language:

english

File:

PDF, 762 KB

english, 2015

2

[IEEE 2016 IEEE International Symposium on Circuits and Systems (ISCAS) - Montréal, QC, Canada (2016.5.22-2016.5.25)] 2016 IEEE International Symposium on Circuits and Systems (ISCAS) - A 28nm FD-SOI standard cell 0.6–1.2V open-loop frequency multiplier for low power SoC clocking

Cochet, Martin, Clerc, Sylvain, Naceur, Mehdi, Schamberger, Pierre, Croain, Damien, Autran, Jean-Luc, Roche, Philipe

Year:

2016

Language:

english

File:

PDF, 1.16 MB

english, 2016

3

A 225 μm² probe single-point calibration digital temperature sensor using body-bias adjustment in 28nm FD-SOI CMOS

Cochet, Martin, Keller, Ben, Clerc, Sylvain, Abouzeid, Fady, Cathelin, Andreia, Autran, Jean-Luc, Roche, Philippe, Nikolic, Borivoje

Journal:

IEEE Solid-State Circuits Letters

Year:

2018

Language:

english

File:

PDF, 2.69 MB

english, 2018

4

A 2.7 pJ/cycle 16 MHz, 0.7 μW Deep Sleep Power ARM Cortex-M0+ Core SoC in 28 nm FD-SOI

Lallement, Guenole, Abouzeid, Fady, Cochet, Martin, Daveau, Jean-Marc, Roche, Philippe, Autran, Jean-Luc

Journal:

IEEE Journal of Solid-State Circuits

Year:

2018

Language:

english

File:

PDF, 4.89 MB

english, 2018

5

[IEEE 2018 IEEE Asian Solid-State Circuits Conference (A-SSCC) - Tainan, Taiwan (2018.11.5-2018.11.7)] 2018 IEEE Asian Solid-State Circuits Conference (A-SSCC) - A 140 nW, 32.768 kHz, 1.9 ppm/°C Leakage-Based Digitally Relocked Clock Reference with 0.1 ppm Long-Term Stability in 28nm FD-SOI

Lallement, Guenole, Abouzeid, Fady, Gilio, Thierry Di, Roche, Philippe, Autran, Jean-Luc

Year:

2018

Language:

english

File:

PDF, 4.57 MB

english, 2018

6

Cytofluorometric methods for assessing absolute numbers of cell subsets in blood

Bruno Brando, David Barnett, George Janossy, Francis Mandy, Brigitte Autran, Gregor Rothe, Barbara Scarpati, Giovanna D'Avanzo, Jean-Luc D'Hautcourt, Rodica Lenkei, Gerd Schmitz, Annalisa Kunkl, Rosa

Journal:

Cytometry Part A

Year:

2000

Language:

english

File:

PDF, 258 KB

english, 2000

7

Quantum Short-channel Compact Modelling of Drain-Current in Double-Gate MOSFET

Daniela Munteanu, Jean-Luc Autran, Xavier Loussier, Samuel Harrison, Robin Cerutti, Thomas Skotnicki

Journal:

Solid-State Electronics

Year:

2006

Language:

english

File:

PDF, 1.02 MB

english, 2006

8

Energy and temperature dependence of electron effective masses in silicon

Cavassilas, Nicolas, Autran, Jean-Luc, Aniel, FreÌdeÌric, Fishman, Guy

Journal:

Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 294 KB

english, 2002

9

3-D Simulation Analysis of Bipolar Amplification in Planar Double-Gate and FinFET With Independent Gates

Munteanu, Daniela, Autran, Jean-Luc

Journal:

IEEE Transactions on Nuclear Science

Year:

2009

Language:

english

File:

PDF, 582 KB

english, 2009

10

9.1.2 Coupling component systems towards systems of systems

Autran, Frédéric, Auzelle, Jean-Philippe, Cattan, Denise, Garnier, Jean-Luc, Luzeaux, Dominique, Mayer, Frédérique, Peyrichon, Marc, Ruault, Jean-René

Journal:

INCOSE International Symposium

Year:

2008

Language:

english

File:

PDF, 707 KB

english, 2008

11

[IEEE ESSCIRC 2017 - 43rd IEEE European Solid-State Circuits Conference - Leuven (2017.9.11-2017.9.14)] ESSCIRC 2017 - 43rd IEEE European Solid State Circuits Conference - A 2.7pJ/cycle 16MHz SoC with 4.3nW power-off ARM Cortex-M0+ core in 28nm FD-SOI

Lallement, Guenole, Abouzeid, Fady, Cochet, Martin, Daveau, Jean-Marc, Roche, Philippe, Autran, Jean-Luc

Year:

2017

Language:

english

File:

PDF, 2.05 MB

english, 2017

12

[IEEE 2017 IEEE Asian Solid-State Circuits Conference (A-SSCC) - Seoul (2017.11.6-2017.11.8)] 2017 IEEE Asian Solid-State Circuits Conference (A-SSCC) - A 0.40pJ/cycle 981 μm 2 voltage scalable digital frequency generator for SoC clocking

Cochet, Martin, Clerc, Sylvain, Lallement, Guenole, Abouzeid, Fady, Roche, Philippe, Autran, Jean-Luc

Year:

2017

Language:

english

File:

PDF, 919 KB

english, 2017

13

[IEEE 2018 IEEE International Symposium on Circuits and Systems (ISCAS) - Florence, Italy (2018.5.27-2018.5.30)] 2018 IEEE International Symposium on Circuits and Systems (ISCAS) - Q-Learning-based Adaptive Power Management for IoT System-on-Chips with Embedded Power States

Debizet, Yvan, Lallement, Guenoie, Abouzeid, Fady, Roche, Philippe, Autran, Jean-Luc

Year:

2018

Language:

english

File:

PDF, 3.36 MB

english, 2018

14

DYNAMOS: a numerical MOSFET model including quantum-mechanical and near-interface trap transient effects

Pascal Masson, Jean-Luc Autran, Daniela Munteanu

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 182 KB

english, 2002

15

Treatment of Point Defects in Nanowire MOSFETs Using the Nonequilibrium Green’s Function Formalism

Marc Bescond, Jean-Luc Autran, Nicolas Cavassilas, Daniela Munteanu, Michel Lannoo

Journal:

Journal of Computational Electronics

Year:

2004

Language:

english

File:

PDF, 246 KB

english, 2004

16

A comparison of SiSiO2 interface trap properties in thin-film transistors with thermal and plasma nitrided oxides

Jean-Luc Autran, Carole Plossu, Frédéric Seigneur, Bernard Balland, Alain Straboni

Journal:

Journal of Non-Crystalline Solids

Year:

1995

Language:

english

File:

PDF, 346 KB

english, 1995

17

Three-level charge pumping study of radiation-induced defects at SiSiO2 interface in submicrometer MOS transistors

Jean-Luc Autran, Bernard Balland, Daniel Babot

Journal:

Journal of Non-Crystalline Solids

Year:

1995

Language:

english

File:

PDF, 381 KB

english, 1995

18

Preface

Anna Vedda, Daniela Munteanu, Maurizio Ferrari, Philippe Paillet, Jean-Luc Autran

Journal:

Journal of Non-Crystalline Solids

Year:

2005

Language:

english

File:

PDF, 49 KB

english, 2005

19

Non-equilibrium gate tunneling current in ultra-thin (

Jordi Suñé, Xavier Oriols, Jean-Luc Autran

Journal:

Journal of Non-Crystalline Solids

Year:

2001

Language:

english

File:

PDF, 134 KB

english, 2001

20

New oxide quality characterization for charge leakage applications using the floating-gate technique

Sophie Renard, Philippe Boivin, Jean-Luc Autran

Journal:

Journal of Non-Crystalline Solids

Year:

2003

Language:

english

File:

PDF, 204 KB

english, 2003

21

Towards a full microscopic approach to the modeling of transistors with nanometer dimensions

Marc Bescond, Michel Lannoo, Didier Goguenheim, Jean-Luc Autran

Journal:

Journal of Non-Crystalline Solids

Year:

2003

Language:

english

File:

PDF, 212 KB

english, 2003

22

Preface

Anna Vedda, Jean-Luc Autran, Maurizio Ferrari, Daniela Munteanu, Maurizio Passacantando

Journal:

Journal of Non-Crystalline Solids

Year:

2003

Language:

english

File:

PDF, 28 KB

english, 2003

23

Preface

Roderick A.B. Devine, Georgio Spinolo, Jean-Luc Autran, Anna Vedda

Journal:

Journal of Non-Crystalline Solids

Year:

1997

Language:

english

File:

PDF, 33 KB

english, 1997

24

3-D Numerical Simulation of Bipolar Amplification in Junctionless Double-Gate MOSFETs Under Heavy-Ion Irradiation

Munteanu, Daniela, Autran, Jean-Luc

Journal:

IEEE Transactions on Nuclear Science

Year:

2012

Language:

english

File:

PDF, 1.05 MB

english, 2012

25

Monte-Carlo Based Charge Sharing Investigations on a Bulk 65 nm RHBD Flip-Flop

Uznanski, Slawosz, Gasiot, Gilles, Roche, Philippe, Autran, Jean-Luc, Ferlet-Cavrois, Veronique

Journal:

IEEE Transactions on Nuclear Science

Year:

2010

Language:

english

File:

PDF, 840 KB

english, 2010

26

Magnetic susceptibility of the Mont-Louis andorra ilmenite-type granite (Pyrenees): A new tool for the petrographic characterization and regional mapping of zoned granite plutons

Gleizes, Gérard, Nédélec, Anne, Bouchez, Jean-Luc, Autran, Albert, Rochette, Pierre

Journal:

Journal of Geophysical Research

Year:

1993

Language:

english

File:

PDF, 1.41 MB

english, 1993

27

Heavy Ion Characterization and Monte Carlo Simulation on 32 nm CMOS Bulk Technology

Uznanski, Slawosz, Gasiot, Gilles, Roche, Philippe, Autran, Jean-Luc, Dugoujon, Laurent

Journal:

IEEE Transactions on Nuclear Science

Year:

2011

Language:

english

File:

PDF, 573 KB

english, 2011

28

Single Event Upset and Multiple Cell Upset Modeling in Commercial Bulk 65-nm CMOS SRAMs and Flip-Flops

Uznanski, Slawosz, Gasiot, Gilles, Roche, Philippe, Tavernier, Clement, Autran, Jean-Luc

Journal:

IEEE Transactions on Nuclear Science

Year:

2010

Language:

english

File:

PDF, 857 KB

english, 2010

29

Photovoltaic response in a resonant tunneling wire-dot-wire junction

Berbezier, Aude, Autran, Jean-Luc, Michelini, Fabienne

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 846 KB

english, 2013

30

New D-Flip-Flop Design in 65 nm CMOS for Improved SEU and Low Power Overhead at System Level

Glorieux, Maximilien, Clerc, Sylvain, Gasiot, Gilles, Autran, Jean-Luc, Roche, Philippe

Journal:

IEEE Transactions on Nuclear Science

Year:

2013

Language:

english

File:

PDF, 759 KB

english, 2013

31

Underground Experiment and Modeling of Alpha Emitters Induced Soft-Error Rate in CMOS 65 nm SRAM

Martinie, Sebastien, Autran, Jean-Luc, Sauze, Sebastien, Munteanu, Daniela, Uznanski, Slawosz, Roche, Philippe, Gasiot, Gilles

Journal:

IEEE Transactions on Nuclear Science

Year:

2012

Language:

english

File:

PDF, 1.11 MB

english, 2012

32

A Silicon Diode-Based Detector for Investigations of Atmospheric Radiation

Wrobel, Frederic, Vaille, Jean-Roch, Pantel, Denis, Dilillo, Luigi, Galliere, Jean-Marc, Autran, Jean-Luc, Cocquerez, Philippe, Chadoutaud, Pierre, Saigne, Frederic

Journal:

IEEE Transactions on Nuclear Science

Year:

2013

Language:

english

File:

PDF, 1.38 MB

english, 2013

33

Sources of variability in alpha emissivity measurements at LA and ULA levels, a multicenter study

McNally, Brendan D., Coleman, Stuart, Warburton, William K., Autran, Jean-Luc, Clark, Brett M., Cooley, Jodi, Gordon, Michael S., Zhu, Zhengmao

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Year:

2014

Language:

english

File:

PDF, 1.26 MB

english, 2014

34

[IEEE 2014 IEEE International Reliability Physics Symposium (IRPS) - Waikoloa, HI, USA (2014.6.1-2014.6.5)] 2014 IEEE International Reliability Physics Symposium - 65 nm fault tolerant latch architecture based on transient propagation blocking

Glorieux, Maximilien, Clerc, Sylvain, Gasiot, Gilles, Autran, Jean-Luc, Roche, Philippe

Year:

2014

Language:

english

File:

PDF, 431 KB

english, 2014

35

[IEEE 2011 12th European Conference on Radiation and Its Effects on Components and Systems (RADECS) - Sevilla, Spain (2011.09.19-2011.09.23)] 2011 12th European Conference on Radiation and Its Effects on Components and Systems - 3-D numerical simulation of bipolar amplification in Junctionless Double-Gate MOSFETs under heavy-ion irradiation

Munteanu, Daniela, Autran, Jean-Luc

Year:

2011

Language:

english

File:

PDF, 602 KB

english, 2011

36

Combining GEANT4 and TIARA for Neutron Soft Error-Rate Prediction of 65 nm Flip-Flops

Uznanski, Slawosz, Gasiot, Gilles, Roche, Philippe, Semikh, Sergey, Autran, Jean-Luc

Journal:

IEEE Transactions on Nuclear Science

Year:

2011

Language:

english

File:

PDF, 1.14 MB

english, 2011

37

[IEEE 2009 European Conference on Radiation and Its Effects on Components and Systems (RADECS) - Brugge, Belgium (2009.09.14-2009.09.18)] 2009 European Conference on Radiation and Its Effects on Components and Systems - Single event upset and multiple cell upset modeling in commercial bulk 65 nm CMOS SRAMs and flip-flops

Uznanski, Slawosz, Gasiot, Gilles, Roche, Philippe, Tavernier, Clement, Autran, Jean-Luc

Year:

2009

Language:

english

File:

PDF, 637 KB

english, 2009

38

[IEEE 2008 European Conference on Radiation and Its Effects on Components and Systems (RADECS) - Jyvaskyla, Finland (2008.09.10-2008.09.12)] 2008 European Conference on Radiation and Its Effects on Components and Systems - Transient response of 3-D Multi-Channel nanowire MOSFETs submitted to heavy ion irradiation: A 3-D simulation study

Munteanu, Daniela, Autran, Jean-Luc

Year:

2008

Language:

english

File:

PDF, 1.65 MB

english, 2008

39

[IEEE 2013 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2013.12.9-2013.12.11)] 2013 IEEE International Electron Devices Meeting - Technology downscaling worsening radiation effects in bulk: SOI to the rescue

Roche, Philippe, Autran, Jean-Luc, Gasiot, Gilles, Munteanu, Daniela

Year:

2013

Language:

english

File:

PDF, 2.27 MB

english, 2013

40

Heavy Ion Testing and 3-D Simulations of Multiple Cell Upset in 65 nm Standard SRAMs

Giot, Damien, Roche, Philippe, Gasiot, Gilles, Autran, Jean-Luc, Harboe-Sorensen, Reno

Journal:

IEEE Transactions on Nuclear Science

Year:

2008

Language:

english

File:

PDF, 970 KB

english, 2008

41

[IEEE 2008 European Conference on Radiation and Its Effects on Components and Systems (RADECS) - Jyvaskyla, Finland (2008.09.10-2008.09.12)] 2008 European Conference on Radiation and Its Effects on Components and Systems - 3-D simulation analysis of bipolar amplification in Planar Double-Gate and FinFET with independent gates

Munteanu, Daniela, Autran, Jean-Luc, Moreau, Mathieu

Year:

2008

Language:

english

File:

PDF, 2.47 MB

english, 2008

42

Transient Response of 3-D Multi-Channel Nanowire MOSFETs Submitted to Heavy Ion Irradiation: a 3-D Simulation Study

Munteanu, Daniela, Autran, Jean-Luc

Journal:

IEEE Transactions on Nuclear Science

Year:

2009

Language:

english

File:

PDF, 652 KB

english, 2009

43

Analytical Modeling of Alpha-Particle Emission Rate at Wafer-Level

Martinie, Sebastien, Autran, Jean-Luc, Munteanu, Daniela, Wrobel, Frédéric, Gedion, Michael, Saigne, Frédéric

Journal:

IEEE Transactions on Nuclear Science

Year:

2011

Language:

english

File:

PDF, 867 KB

english, 2011

44

Microscopic model for dielectric constant in metal-insulator-metal capacitors with high-permittivity metallic oxides

Bécu, Stéphane, Crémer, Sébastien, Autran, Jean-Luc

Journal:

Applied Physics Letters

Year:

2006

Language:

english

File:

PDF, 480 KB

english, 2006

45

Improvement of current-control induced by oxide notch in very short field-effect transistor

Cavassilas, Nicolas, Bescond, Marc, Autran, Jean-Luc

Journal:

Applied Physics Letters

Year:

2005

Language:

english

File:

PDF, 298 KB

english, 2005

46

Frequency characterization and modeling of interface traps in HfSi[sub x]O[sub y]/HfO[sub 2] gate dielectric stack from a capacitance point-of-view

Masson, Pascal, Autran, Jean-Luc, Houssa, Michel, Garros, Xavier, Leroux, Charles

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 245 KB

english, 2002

47

[IEEE 2014 IEEE Radiation Effects Data Workshop (REDW) (in conjunction with NSREC 2014) - Paris, France (2014.7.14-2014.7.18)] 2014 IEEE Radiation Effects Data Workshop (REDW) - Altitude and Underground Real-Time SER Testing of SRAMs Manufactured in CMOS Bulk 130, 65 and 40 nm

Autran, Jean-Luc, Munteanu, Daniela, Sauze, S., Gasiot, G., Roche, P.

Year:

2014

Language:

english

File:

PDF, 8.19 MB

english, 2014

48

[IEEE 2014 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - Millbrae, CA, USA (2014.10.6-2014.10.9)] 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) - Experimental model of adaptive body biasing for energy efficiency in 28nm UTBB FD-SOI

Cochet, Martin, Pelloux-Prayer, Bertrand, Saligane, Mehdi, Clerc, Sylvain, Roche, Philippe, Autran, Jean-Luc, Sylvester, Dennis

Year:

2014

Language:

english

File:

PDF, 1.23 MB

english, 2014

49

An Efficient Model for Accurate Capacitance-Voltage Characterization of High-k Gate Dielectrics Using a Mercury Probe

Garros, Xavier, Leroux, Charles, Autran, Jean-Luc

Journal:

Electrochemical and Solid-State Letters

Year:

2002

Language:

english

File:

PDF, 140 KB

english, 2002

50

Increased carotid intima–media thickness is not associated with T-cell activation nor with cytomegalovirus in HIV-infected never-smoker patients

Goulenok, Tiphaine, Boyd, Anders, Larsen, Martin, Fastenackels, Solène, Boccara, Franck, Meynard, Jean-Luc, Hadour, Nabila, Samri, Assia, Desvarieux, Moïse, Autran, Brigitte, Appay, Victor, Girard, Pi

Journal:

Year:

2015

Language:

english

File:

PDF, 350 KB

english, 2015